Surface defect compensation of Ga2O3 thin films N-doped by nitrogen plasma for enhanced electrical performance and luminescence effect

Nitrogen (N) doping engineering is considered a promising approach to achieve p-type conductivity of Ga2O3 films. However, the defect self-compensation effect has been major obstacle in this field. In work, we propose straightforward and environmentally friendly strategy obtain doped surface on β-Ga2O3 films via nonthermal N plasma-based treatment. By substituting nitrogen with oxygen, acceptor impurity levels are formed near valence band, self-trapped exciton recombination occurs, thereby enhancing luminescence related defects. Meanwhile, although achieving stable conduction dopant acceptors remains challenging, conductive properties enhanced by compensation oxygen vacancy (VO) donor Therefore, detailed investigations into N-doped thin great research potential for device applications.